3-7 GHz Low Power Wide-Band Common Gate Low Noise Amplifier in 0.18μm CMOS Process

被引：0

作者：

Galal, A. I. A. ^{[1
]}

Pokharel, R. K. ^{[1
]}

Kanaya, H. ^{[1
]}

Yoshida, K. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Motooka 744, Fukuoka 8190395, Japan

来源：

2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年

关键词：

Common gate; low noise amplifier; ultrawide band amplifier; WIRELESS RECEIVERS; LNA; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-wide band low noise amplifier (LNA) is proposed. An UWB LNA from 3- 7 GHz has been designed exploiting the wide band input matching of common gate and the high gain of cascode amplifier. The LNA has been fabricated in the standard 0.18 mu m CMOS process. The measured gain is 11.5dB from 3 GHz to 7 GHz, and noise figure is 3.5 dB. The measured input and output return loss is less than -11 dB of the entire band. The measured input third-order intercept point IIP3 is 2.5 dBm at 4 GHz. It consumes 9 mW from 1.8 V supply voltage.

引用

页码：342 / 345

页数：4

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