Dielectric charging effects in floating electrode MEMS capacitive switches

被引：10
|
作者：
Michalas, L. [1 ]
Koutsoureli, M. [1 ]
Papandreou, E. [1 ]
Giacomozzi, F. [2 ]
Papaioannou, G. [1 ]
机构：
[1] Univ Athens, Dept Phys, Solid State Sect, GR-10680 Athens, Greece
[2] Fdn Bruno Kessler, Ctr Mat & Microsyst, Trento, Italy
来源：
MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 9-10期
关键词：
RF MEMS; Floating electrode; Dielectric charging; Reliability; CONTACTLESS; MODEL;
D O I：
10.1016/j.microrel.2015.07.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a study oriented to the understanding of the floating electrode role on the charging characteristics of floating electrode RF MEMS capacitive switches. Identical devices with and without floating electrode have been stressed under induced charging mode. Biases of different levels and polarities were applied to the transmission line. Reduced and asymmetric, with respect to the bias polarity, charging effects were obtained on devices with floating electrode compared to the conventional ones. The results contribute towards the conclusion that the use of floating electrode in conjunction with the appropriate actuation polarity may reduce the charging effects and thus improving the device lifetime. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1891 / 1895
页数：5
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