Influence of oxygen plasma treatment on boron carbon nitride film composition

被引：13

作者：

Aoki, Hidemitsu ^{[1
]}

Masuzumi, Takuro ^{[1
]}

Watanabe, Daisuke ^{[1
]}

Mazumder, M. K. ^{[1
]}

Sota, Hiroshi ^{[1
]}

Kimura, Chiharu ^{[1
]}

Sugino, Takashi ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 06期

关键词：

Ashing; Interconnection; Low-k; BCN; Low dielectric constant; O(2) plasma; XPS; N THIN-FILMS; LASER-ABLATION;

D O I：

10.1016/j.apsusc.2008.10.045

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Variations in the composition and bonds of boron carbon nitride (BCN) film caused due to an oxygen (O(2)) plasma ashing process are investigated for a low dielectric constant (low-k) insulating film for next generation LSI devices. The O(2) plasma treatment is preformed for BCN samples with various C compositions. The etching rate of BCN films with an O(2) plasma decreases with increasing C composition. The reaction of O atoms is suppressed in the BCN film with a high C composition. B-N and B-C bonds with lower bond energies are easily broken by the O(2) plasma and replaced by the generation of B-O, N-O, and C-O bonds. The B-atom concentration for all samples is decreased significantly by the O(2) plasma treatment. Ion bombardment may play a more dominant role than the O-atom reaction in the etching of the BCN film. The existence of C-N bonds with a high bonding energy may suppress etching and incorporation of O atoms. (C) 2008 Published by Elsevier B. V.

引用

页码：3635 / 3638

页数：4

共 17 条

[1]

AOKI H, 2007, P NEW DIAM NAN CARB, P107

[2]

FUKUSAWA M, 2005, P INT INT TECHN C II, V5

[3]

Kerr J.A., 1999, CRC HDB CHEM PHYS, V81st

[4] Structural and compositional study of B-C-N films produced by laser ablation of B4C targets in N2 atmosphere [J].

Laidani, N ;

Anderle, M ;

Canteri, R ;

Elia, L ;

Luches, A ;

Martino, M ;

Micheli, V ;

Speranza, G .

APPLIED SURFACE SCIENCE, 2000, 157 (03) :135-144

[5] Bonding characteristics of DC magnetron sputtered B-C-N thin films investigated by Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy [J].

Linss, V ;

Rodil, SE ;

Reinke, P ;

Garnier, MG ;

Oelhafen, P ;

Kreissig, U ;

Richter, F .

THIN SOLID FILMS, 2004, 467 (1-2) :76-87

[6] Ag diffusion in low-k materials (BCN and SiOC) and its challenges for future interconnection [J].

Mazumder, Motaharul Kabir ;

Moriyama, Ryota ;

Watanabe, Daisuke ;

Kimura, Chiharu ;

Aoki, Hidemitsu ;

Sugino, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B) :2006-2010

[7] Nano-mechanical properties of BCN/CN/BN multilayer films [J].

Morant, C. ;

Caceres, D. ;

Sanz, J. M. ;

Elizalde, E. .

[8] Boron carbonitride films deposited by pulsed laser ablation [J].

Perrone, A ;

Caricato, AP ;

Luches, A ;

Dinescu, M ;

Ghica, C ;

Sandu, V ;

Andrei, A .

APPLIED SURFACE SCIENCE, 1998, 133 (04) :239-242

[9] Preparation of B-C-N thin films by rf plasma assisted CVD [J].

Polo, MC ;

Martinez, E ;

Esteve, J ;

Andujar, JL .

[10]

SUGINO T, 1997, JPN J APPL PHYS, V36, P463

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