Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth

The enhanced emission efficiency and reduced spectral shifts of a green InGaN/GaN quantum-well (QW) light-emitting-diode epitaxial structure by using the prestrained growth technique when compared with a control sample of the same emission spectrum with conventional growth are demonstrated. By adding an similar to 7%-indium InGaN/GaN QW to the structure before the growth of designated emitting high-indium QWs, the growth temperature of the emitting QWs can be raised by 30 degrees C while keeping about the same emission wavelength around 544 nm in photoluminescence (PL) and 525 nm in electroluminescence (EL). The internal quantum efficiency, room-temperature PL intensity, and EL intensity at the injection current of 20 mA are increased by similar to 167%, similar to 140%, and similar to 182%, respectively. Also, the spectral blueshift range in increasing injection current in the range of 50 mA is decreased by 46%. Based on the pump-power dependent PL measurement, it is found that the quantum-confined Stark effect (QCSE) becomes weaker in the prestrained growth sample. Also, from the calibration of the Arrhenius plots, the carrier localization effect is observed to become weaker under prestrained growth. Therefore, the enhanced emission efficiency is mainly attributed to the decreased defect density and the reduced QCSE in the prestrained sample.