Radiation hardening of silicon detectors

被引：14
作者：
Lemeilleur, F [1 ]
机构：
[1] CERN, CH-1211 Geneva 23, Switzerland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 434卷 / 01期
关键词：
silicon detectors; radiation hardening;
D O I：
10.1016/S0168-9002(99)00436-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：82 / 89
页数：8
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