Enhanced photosensitivity of highly spectrum selective cylindrical gate In1-xGaxAs nanowire MOSFET photodetector

被引：11

作者：

Sharma, Sanjeev Kumar ^{[1
]}

Raj, Balwinder ^{[1
]}

Khosla, Mamta ^{[1
]}

机构：

[1] NIT Jalandhar, Dept ECE, VLSI Design Lab, Jalandhar 144011, Punjab, India

来源：

MODERN PHYSICS LETTERS B | 2019年 / 33卷 / 12期

关键词：

In1-xGaxAs nanowire; cylindrical gate (CG) MOSFET; available photocurrent (I-ph); photosensitivity; responsivity (R lambda); quantum efficiency (Q(e))/photoconductive gain; INGAAS NANOWIRES; MODEL; CHANNEL; SILICON; GROWTH;

D O I：

10.1142/S0217984919501446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, an In1-xCxAs nanowire metal oxide semiconductor field effect transistor (MOSFET) photosensor with zinc oxide (metallic ZnO), which act as a transparent optical window over channel has been investigated. The electrical characterization of In1-xCxAs nanowire MOSFET was compared to their silicon counterpart. In1-xCxAs nanowire MOSFET responds to visible-near infrared (600 nm to 1.7 nm) under light illumination as opposite to silicon nanowire MOSFET, which respond to ultraviolet to visible spectra (Peak @ 400 nm). ZnO-SiO2-InGaAs device is characterized by responsivity (R lambda) of 0.25 A W-1, photoconductive gain of 65 x 10(5)%, with reasonable available photocurrent of x10(8) and sensitivity (I-illumination/I-dark) of x 10(6). The present work demonstrates the potential for high performance visible to near-infrared In1-xCxAs detectors with tunable band gaps for applications like interactive display, indoor communication and optical sensors.

引用

页数：14

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