Multi-peak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes

被引：5
作者：
Yang, CC
Huang, KC
Su, YK
机构：
[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN 701,TAIWAN
[2] NATL KAOHSIUNG INST TECHNOL,DEPT ELECT ENGN,KAOHSIUNG 804,TAIWAN
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 08期
关键词：
negative resistance; tunnel diodes; semiconductor quantum wells;
D O I：
10.1049/el:19960491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report a simple method for decreasing the valley current density and therefore increasing the peak-to-valley current ratio (PVCR) so that it reached 360 at room temperature in GaAs/In(0.59)GA(0.41)As/InAs multi-stepped quantum well resonant interband tunnelling diodes (MSQW RITDs) using a GaAs undoping spacer layer. The PVCR is better data than that of other RITDs, to the knowledge of the authors. Multiple peak resonant tunnelling has been observed in this structure as the undoped GaAs spacer layer is involved.
引用
收藏
页码：774 / 775
页数：2
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