Graphene layers on Cu and Ni (111) surfaces in layer controlled graphene growth

被引:37
作者
Wang, Qiang [1 ,2 ,3 ]
Wei, Li [1 ]
Sullivan, Michael [2 ]
Yang, Shuo-Wang [2 ]
Chen, Yuan [1 ]
机构
[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore
[2] Inst High Performance Comp, Singapore 138632, Singapore
[3] Nanjing Univ Technol, Coll Sci, Dept Appl Chem, Nanjing 210009, Peoples R China
基金
新加坡国家研究基金会;
关键词
EPITAXIAL GRAPHENE; FRONTIER ORBITALS; CARBON CLUSTERS; GRAPHITE; ALGORITHM; TRANSPORT; ALLOY; FILMS;
D O I
10.1039/c2ra23105k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The properties of graphene strongly depend on its thickness. It is important to understand the graphene-metal interaction to control its thickness during its growth on metal surfaces. Here, we used the DFT-D2 method of Grimme, which includes the critical long-range van der Waals forces in the graphene-metal interaction, to study the interfaces between mono-, bi-, and trilayer graphene and Cu and Ni (111) surfaces. Our results show the adsorption energy increases with the increase of graphene layers on Ni (111); in contrast, it decreases on Cu (111). Charge density and partial density of states analyses show that monolayer graphene adsorbed on Ni (111) is more reactive than that on Cu (111). Another graphene layer can be easily formed on top of monolayer or bilayer graphene adsorbed on Ni (111); but not on Cu (111). These findings provide a useful guide for achieving precise layer controlled graphene growth and designing graphene based devices.
引用
收藏
页码:3046 / 3053
页数:8
相关论文
共 65 条
[1]   Graphene on metal surfaces and its hydrogen adsorption: A meta-GGA functional study [J].
Andersen, Mie ;
Hornekaer, Liv ;
Hammer, Bjork .
PHYSICAL REVIEW B, 2012, 86 (08)
[2]   Graphene: synthesis and applications [J].
Avouris, Phaedon ;
Dimitrakopoulos, Christos .
MATERIALS TODAY, 2012, 15 (03) :86-97
[3]  
Bader R. F. W., 1994, Atoms in Molecules: A Quantum Theory, V22
[4]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[5]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[6]   Ultrahigh electron mobility in suspended graphene [J].
Bolotin, K. I. ;
Sikes, K. J. ;
Jiang, Z. ;
Klima, M. ;
Fudenberg, G. ;
Hone, J. ;
Kim, P. ;
Stormer, H. L. .
SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355
[7]   Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections [J].
Bucko, Tomas ;
Hafner, Juergen ;
Lebegue, Sebastien ;
Angyan, Janos G. .
JOURNAL OF PHYSICAL CHEMISTRY A, 2010, 114 (43) :11814-11824
[8]   Contrasting Behavior of Carbon Nucleation in the Initial Stages of Graphene Epitaxial Growth on Stepped Metal Surfaces [J].
Chen, Hua ;
Zhu, Wenguang ;
Zhang, Zhenyu .
PHYSICAL REVIEW LETTERS, 2010, 104 (18)
[9]   Synthesis and Characterization of Large-Area Graphene and Graphite Films on Commercial Cu-Ni Alloy Foils [J].
Chen, Shanshan ;
Cai, Weiwei ;
Piner, Richard D. ;
Suk, Ji Won ;
Wu, Yaping ;
Ren, Yujie ;
Kang, Junyong ;
Ruoff, Rodney S. .
NANO LETTERS, 2011, 11 (09) :3519-3525
[10]   Growth of graphene on Ir(111) [J].
Coraux, Johann ;
N'Diaye, Alpha T. ;
Engler, Martin ;
Busse, Carsten ;
Wall, Dirk ;
Buckanie, Niemma ;
Heringdorf, Frank-j Meyer Zu ;
van Gastel, Raoul ;
Poelsema, Bene ;
Michely, Thomas .
NEW JOURNAL OF PHYSICS, 2009, 11