Band alignment in SnS thin-film solar cells: Possible origin of the low conversion efficiency

被引:125
作者
Burton, Lee A. [1 ]
Walsh, Aron
机构
[1] Univ Bath, Ctr Sustainable Chem Technol, Bath BA2 7AY, Avon, England
基金
英国工程与自然科学研究理事会;
关键词
Tin compounds;
D O I
10.1063/1.4801313
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tin sulfide is an attractive absorber material for low-cost thin-film solar cells. Despite the ideal physical properties of bulk SnS, the photovoltaic conversion efficiencies achieved in devices to date have been no greater than 2%. Assessment of the valence band energy of the stable orthorhombic phase of SnS reveals a low ionisation potential (4.7 eV) in comparison to typical absorber materials (CdTe, CuInSe2, and Cu2ZnSnS4). A band mis-alignment is therefore predicted with commonly used back contact and buffer layers. Alternative configurations are proposed that should improve device performance. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4801313]
引用
收藏
页数:3
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