CVD-Enabled Graphene Manufacture and Technology

被引:102
作者
Hofmann, Stephan [1 ]
Braeuninger-Weimer, Philipp [1 ]
Weatherup, Robert S. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
基金
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
CHEMICAL-VAPOR-DEPOSITION; HEXAGONAL BORON-NITRIDE; HIGH-QUALITY GRAPHENE; IN-SITU OBSERVATIONS; FEW-LAYER GRAPHENE; TRILAYER GRAPHENE; GRAIN-BOUNDARIES; LARGE-AREA; GROWTH; NICKEL;
D O I
10.1021/acs.jpclett.5b01052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for "electronic-grade" large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth.
引用
收藏
页码:2714 / 2721
页数:8
相关论文
共 62 条
[1]   Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition [J].
Addou, Rafik ;
Dahal, Arjun ;
Sutter, Peter ;
Batzill, Matthias .
APPLIED PHYSICS LETTERS, 2012, 100 (02)
[2]  
[Anonymous], 2014, NAT NANOTECHNOL, V9, P725
[3]   Breaking of Symmetry in Graphene Growth on Metal Substrates [J].
Artyukhov, Vasilii I. ;
Hao, Yufeng ;
Ruoff, Rodney S. ;
Yakobson, Boris I. .
PHYSICAL REVIEW LETTERS, 2015, 114 (11)
[4]   NUCLEATION AND GROWTH OF CARBON DEPOSITS FROM NICKEL CATALYZED DECOMPOSITION OF ACETYLENE [J].
BAKER, RTK ;
BARBER, MA ;
WAITE, RJ ;
HARRIS, PS ;
FEATES, FS .
JOURNAL OF CATALYSIS, 1972, 26 (01) :51-&
[5]   The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects [J].
Batzill, Matthias .
SURFACE SCIENCE REPORTS, 2012, 67 (3-4) :83-115
[6]   One-dimensional heterostructures in semiconductor nanowhiskers [J].
Björk, MT ;
Ohlsson, BJ ;
Sass, T ;
Persson, AI ;
Thelander, C ;
Magnusson, MH ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060
[7]   Graphene electrochemistry: fundamental concepts through to prominent applications [J].
Brownson, Dale A. C. ;
Kampouris, Dimitrios K. ;
Banks, Craig E. .
CHEMICAL SOCIETY REVIEWS, 2012, 41 (21) :6944-6976
[8]   Nucleation Control for Large, Single Crystalline Domains of Mono layer Hexagonal Boron Nitride via Si-Doped Fe Catalysts [J].
Caneva, Sabina ;
Weatherup, Robert S. ;
Bayer, Bernhard C. ;
Brennan, Barry ;
Spencer, Steve J. ;
Mingard, Ken ;
Cabrero-Vilatela, Andrea ;
Baehtz, Carsten ;
Pollard, Andrew J. ;
Hofmann, Stephan .
NANO LETTERS, 2015, 15 (03) :1867-1875
[9]   Boron nitride nanomesh [J].
Corso, M ;
Auwärter, W ;
Muntwiler, M ;
Tamai, A ;
Greber, T ;
Osterwalder, J .
SCIENCE, 2004, 303 (5655) :217-220
[10]   Graphene monolayer rotation on Ni(111) facilitates bilayer graphene growth [J].
Dahal, Arjun ;
Addou, Rafik ;
Sutter, Peter ;
Batzill, Matthias .
APPLIED PHYSICS LETTERS, 2012, 100 (24)