Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth

被引：41

作者：

Kowarik, Stefan ^{[1
]}

Gerlach, Alexander ^{[1
]}

Sellner, Stefan ^{[1
]}

Cavalcanti, Leide ^{[2
]}

Konovalov, Oleg ^{[2
]}

Schreiber, Frank ^{[1
]}

机构：

[1] Inst Angew Phys, D-72076 Tubingen, Germany

[2] European Synchrotron Radiat Facil, F-38043 Grenoble 9, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 95卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

MOLECULAR-BEAM DEPOSITION; ORGANIC THIN-FILMS; THERMAL-STABILITY; PENTACENE; MORPHOLOGY; LAYER; SIO2; DIP;

D O I：

10.1007/s00339-008-5012-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the temperature-dependent polymorphs in diindenoperylene (DIP) thin films on sapphire and silicon oxide substrates using in situ X-ray scattering. On both substrates the DIP unit cell is very similar to the high-temperature phase of bulk crystals, with the substrate stabilising this structure well below the temperature where a phase transition to a low-temperature phase is observed in the bulk. Lowering the substrate temperature for DIP growth leads to a change in molecular orientation and an additional polymorph appears, with both these effects being more pronounced on sapphire as compared to silicon oxide. Using real-time reciprocal-space mapping we observe an expansion of the in-plane unit cell during DIP growth, which may be due to changes in molecular orientation as well as strain in the first monolayers.

引用

页码：233 / 239

页数：7

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