CMOS Small-Signal and Thermal Noise Modeling at High Frequencies

被引：26

作者：

Antonopoulos, Angelos ^{[1
]}

Bucher, Matthias ^{[1
]}

Papathanasiou, Kostas ^{[1
]}

Mavredakis, Nikolaos ^{[1
]}

Makris, Nikolaos ^{[1
]}

Sharma, Rupendra Kumar ^{[1
]}

Sakalas, Paulius ^{[2
,3
]}

Schroter, Michael ^{[3
,4
]}

机构：

[1] Tech Univ Crete, Sch Elect & Comp Engn, Khania 73100, Greece

[2] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[3] Tech Univ Dresden, D-01069 Dresden, Germany

[4] Univ Calif San Diego, San Diego, CA 92103 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 11期

关键词：

Compact model; high-frequency (HF) noise; induced gate noise; metal-oxide-semiconductor field-effect transistor (MOSFET); millimeter wave; moderate inversion (MI); radio frequency (RF); scaling; technology computer aided design (TCAD); CHANNEL NOISE; GATE NOISE; RF NOISE; MOSFETS; ACCURATE; DESIGN; PERFORMANCE; TRANSISTORS; PARASITICS; SIMULATION;

D O I：

10.1109/TED.2013.2283511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the behavior of radio frequency (RF) CMOS noise up to 24 GHz is analyzed and verified with measurements over a wide range of bias voltages and channel lengths. For the first time, approaches for excess noise factor modeling are validated versus measurements. Furthermore, important RF CMOS figures of merit are examined over many CMOS generations. With the scaling of CMOS technology, optimum RF performance is shown to be shifted from higher moderate toward lower moderate inversion, providing important guidelines for RFIC design. The results are validated with the charge-based EKV3 compact model, which considers short-channel effects such as channel length modulation, velocity saturation, and carrier heating.

引用

页码：3726 / 3733

页数：8

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