The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

被引：1

作者：

Jeon, Hee Chang ^{[1
]}

Li, Mingkai ^{[2
]}

Lee, Seung Joo ^{[1
]}

Ihm, Gukhyung ^{[3
]}

Kang, Tae Won ^{[1
]}

Chizhik, S. A. ^{[4
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Hubei Univ, Dept Mat Sci & Engn, Wuhan, Hubei, Peoples R China

[3] Chungnam Natl Univ, Dept Phys, Daejon 305764, South Korea

[4] Inst Heat & Mass Transfer, Minsk 220072, BELARUS

来源：

CURRENT APPLIED PHYSICS | 2015年 / 15卷

基金：

新加坡国家研究基金会;

关键词：

Diluted magnetic semiconductor; Quantum well; Specific heat; GaMnAs; Phase transition;

D O I：

10.1016/j.cap.2015.04.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase transition and specific heat of carrier-induced diluted magnetic semiconductors (DMS) (Ga,Mn)As quantum well are investigated theoretically. With different concentration of magnetic ion and hole gas, there are three types of phase transitions, first-order, second-order and mixed first and second order. The specific heat of these three types of phase transitions are different, especially for the mixed-order phase transition, which shows two-step transition. The results indicate that the specific heat of DMS is a good tool to study the phase transition and critical phenomena of those quantum wells. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：S26 / S29

页数：4

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