The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

被引：1
|
作者：
Jeon, Hee Chang [1 ]
Li, Mingkai [2 ]
Lee, Seung Joo [1 ]
Ihm, Gukhyung [3 ]
Kang, Tae Won [1 ]
Chizhik, S. A. [4 ]
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Hubei Univ, Dept Mat Sci & Engn, Wuhan, Hubei, Peoples R China
[3] Chungnam Natl Univ, Dept Phys, Daejon 305764, South Korea
[4] Inst Heat & Mass Transfer, Minsk 220072, BELARUS
来源：
CURRENT APPLIED PHYSICS | 2015年 / 15卷
基金：
新加坡国家研究基金会;
关键词：
Diluted magnetic semiconductor; Quantum well; Specific heat; GaMnAs; Phase transition;
D O I：
10.1016/j.cap.2015.04.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The phase transition and specific heat of carrier-induced diluted magnetic semiconductors (DMS) (Ga,Mn)As quantum well are investigated theoretically. With different concentration of magnetic ion and hole gas, there are three types of phase transitions, first-order, second-order and mixed first and second order. The specific heat of these three types of phase transitions are different, especially for the mixed-order phase transition, which shows two-step transition. The results indicate that the specific heat of DMS is a good tool to study the phase transition and critical phenomena of those quantum wells. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：S26 / S29
页数：4
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