Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

被引：45

作者：

Minj, A. ^{[1
]}

Cros, A. ^{[1
]}

Garro, N. ^{[1
]}

Colchero, J. ^{[2
]}

Auzelle, T. ^{[3
,4
]}

Daudin, B. ^{[3
,4
]}

机构：

[1] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain

[2] Univ Murcia, Dept Fis, Fac Quim, E-30100 Murcia, Spain

[3] Univ Grenoble Alpes, INAC SP2M, F-38000 Grenoble, France

[4] CEA Grenoble, INAC SP2M, F-38054 Grenoble, France

来源：

NANO LETTERS | 2015年 / 15卷 / 10期

关键词：

Nanowire; GaN; polarity; Kelvin probe force microscopy; surface photovoltage; piezo force microscopy; PIEZORESPONSE; PHOTOELECTRON; GAAS; ZNO;

D O I：

10.1021/acs.nanolett.5b02607

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we demonstrate the capabilities of atomic force microscopies (AFMs) for the nondestructive determination of the polarity of GaN nanowires (N1/Vs). Three complementary AFMs are analyzed here: Kelvin probe force microscopy (KPFM), light-assisted KPFM, and piezo-force microscopy (PFM). These techniques allow us to assess the polarity of individual NWs over an area of tens of mu m(2) and provide statistics on the polarity of the ensemble with an accuracy hardly reachable by other methods. The precise quantitative analysis of the tip sample interaction by multidimensional spectroscopic measurements, combined with advanced data analysis, has allowed the separate characterization of electrostatic and van der Waals forces as a function of tip sample distance. Besides their polarity, the net surface charge density of individual NVVs was estimated.

引用

页码：6770 / 6776

页数：7

共 41 条

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