Effect of boron nitride on the phase stability and phase transformations in silicon carbide

被引:10
|
作者
Turan, S
Knowles, KM
机构
[1] Dept. of Mat. Science and Metallurgy, University of Cambridge, Cambridge
关键词
D O I
10.1111/j.1151-2916.1996.tb08114.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-resolution transmission electron microscopy has been used to study the effect of hexagonal boron nitride (h-BN) on the stability of SiC polytypes in Si3N4-particulate-reinforced SIC composites in which h-BN particles appeared as a trace contaminant. In contrast to previous transmission electron microscopy work on SiC-BN composites, our results imply that there is no clear preference for a particular SIC polytype to be stabilized by h-BN nearby, Instead, we propose that previous observations suggesting that the 3C SIC polytype is stabilized by h-BN can be simply explained in terms of it being stabilized indirectly by nitrogen arising from BN dissociation during processing.
引用
收藏
页码:3325 / 3328
页数:4
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