Low temperature synthesis of wurtzite zinc sulfide (ZnS) thin films by chemical spray pyrolysis

被引:68
作者
Zeng, Xin [1 ]
Pramana, Stevin S. [1 ]
Batabyal, Sudip K. [2 ]
Mhaisalkar, Subodh G. [1 ,2 ]
Chen, Xiaodong [1 ]
Jinesh, K. B. [2 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Energy Res Inst NTU ERI N, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; SOLAR-CELL; SILICON; BUFFER; MICROSTRUCTURE; KINETICS;
D O I
10.1039/c3cp43470b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc sulfide (ZnS) thin films have been synthesized by spray pyrolysis at 310 degrees C using an aqueous solution of zinc chloride (ZnCl2) and thioacetamide (TAA). Highly crystalline films were obtained by applying TAA instead of thiourea (TU) as the sulfur source. X-ray diffraction (XRD) analyses show that the films prepared by TAA contained a wurtzite structure, which is usually a high temperature phase of ZnS. The crystallinity and morphology of the ZnS films appeared to have a strong dependence on the spray rate as well. The asymmetric polar structure of the TAA molecule is proposed to be the intrinsic reason of the formation of highly crystalline ZnS at comparatively low temperatures. The violet and green emissions from photoluminescence (PL) spectroscopy reflected the sulfur and zinc vacancies in the film. Accordingly, the photodetectors fabricated using these films exhibit excellent response to green and red photons of 525 nm and 650 nm respectively, though the band gaps of the materials, estimated from optical absorption spectroscopy, are in the range of 3.5-3.6 eV.
引用
收藏
页码:6763 / 6768
页数:6
相关论文
共 40 条
[1]   Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors [J].
Adamopoulos, George ;
Bashir, Aneeqa ;
Gillin, William P. ;
Georgakopoulos, Stamatis ;
Shkunov, Maxim ;
Baklar, Mohamed A. ;
Stingelin, Natalie ;
Bradley, Donal D. C. ;
Anthopoulos, Thomas D. .
ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (03) :525-531
[2]   Formation of a ZnS/Zn(S,O) bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition [J].
Baer, M. ;
Ennaoui, A. ;
Klaer, J. ;
Kropp, T. ;
Saez-Araoz, R. ;
Allsop, N. ;
Lauermann, I. ;
Schock, H. -W. ;
Lux-Steiner, M. C. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
[3]   Atomic layer deposition of ZnS via in situ production of H2S [J].
Bakke, J. R. ;
King, J. S. ;
Jung, H. J. ;
Sinclair, R. ;
Bent, S. F. .
THIN SOLID FILMS, 2010, 518 (19) :5400-5408
[4]   Nanostructured ZnS:Ni2+ photocatalysts prepared by ultrasonic spray pyrolysis [J].
Bang, Jin Ho ;
Hehnich, Richard J. ;
Suslick, Kenneth S. .
ADVANCED MATERIALS, 2008, 20 (13) :2599-+
[5]   Topography mediated patterning of inorganic materials by spray pyrolysis [J].
Beckel, Daniel ;
Briand, Danick ;
Studart, Andre R. ;
de Rooij, Nicolaas F. ;
Gauckler, Ludwig J. .
ADVANCED MATERIALS, 2006, 18 (22) :3015-+
[6]   Effect of grain shape on the agglomeration of polycrystalline thin films [J].
Bouville, Mathieu .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[7]  
Bruker, 2005, TOP VERS 4
[8]  
Cullity B. D., ELEMENTS XRAY DIFFRA
[9]   Substrate temperature influence on ZnS thin films prepared by ultrasonic spray [J].
Daranfed, W. ;
Aida, M. S. ;
Hafdallah, A. ;
Lekiket, H. .
THIN SOLID FILMS, 2009, 518 (04) :1082-1084
[10]   Structure, composition and optical properties of ZnS thin films prepared by spray pyrolysis [J].
Elidrissi, B ;
Addou, M ;
Regragui, M ;
Bougrine, A ;
Kachouane, A ;
Bernède, JC .
MATERIALS CHEMISTRY AND PHYSICS, 2001, 68 (1-3) :175-179