Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals

被引：148

作者：

Cornacchia, F. ^{[1
]}

Di Lieto, A. ^{[1
]}

Tonelli, M. ^{[1
]}

Richter, A. ^{[2
]}

Heumann, E. ^{[2
]}

Huber, G. ^{[2
]}

机构：

[1] Univ Pisa, NEST, INFM, CNR,Dipartimento Fis, I-56127 Pisa, Italy

[2] Univ Hamburg, Inst Laser Phys, D-22761 Hamburg, Germany

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 20期

关键词：

D O I：

10.1364/OE.16.015932

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF(4), LiLuF(4) and LiGdF(4) fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the (3)P(0) level. Exploiting the (3)P(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range. (C) 2008 Optical Society of America

引用

页码：15932 / 15941

页数：10

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