DC/HF circuit model for LDMOS including self-heating and quasi-saturation

被引：0

作者：

Canepari, A ^{[1
]}

Bertrand, G ^{[1
]}

Minondo, M ^{[1
]}

Jourdan, N ^{[1
]}

Chante, JP ^{[1
]}

机构：

[1] STMicroelect, FTM R&D, CM2A, F-38926 Crolles, France

来源：

2005 PhD Research in Microelectronics and Electronics, Vols 1 and 2, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a complete SPICE sub-circuit model for a lateral double diffused N-MOS (NLDMOS) in a 0.25 mu m BICMOS technology. The model accurately simulates the device under both DC and AC conditions. It accounts for all basic LDMOS phenomena such as graded channel, quasi-saturation, and self-heating effects. Moreover, the sub-circuit approach guarantees flexibility and portability in many simulators.

引用

页码：271 / 274

页数：4

共 6 条

[1] A. surface-potential-based high-voltage compact LDMOS transistor model [J].

Aarts, A ;

D'Halleweyn, N ;

van Langevelde, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (05) :999-1007

[2]

ANGHEL C, 2003, IEDM, P133

[3]

[Anonymous], P IEEE ICMTS

[4] The electro-thermal smoothie database model for LDMOS devices [J].

Cuoco, V ;

Neo, WCE ;

Spirito, M ;

Yanson, O ;

Nenadovic, N ;

de Vreede, LCN ;

Jos, HFF ;

Burghartz, JN .

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, :457-460

[5] Channel length extraction for DMOS transistors using capacitance-voltage measurements [J].

Valtonen, R ;

Olsson, J ;

De Wolf, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (07) :1454-1459

[6]

BSIM3S01

← 1 →