Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator

被引：10
作者：
Li, Yuanpeng [1 ]
Zhang, Dainan [1 ]
Jia, Ruitao [1 ]
Li, Xuesong [1 ]
Liao, Yulong [1 ]
Wen, Qi-Ye [1 ]
Zhong, Zhiyong [1 ]
Wen, Tianlong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2020年 / 2卷 / 07期
基金：
中国国家自然科学基金;
关键词：
graphene/silicon hybrid diode; terahertz modulation; gold nanoparticles; modulation mechanism; band theory;
D O I：
10.1021/acsaelm.0c00250
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Graphene/silicon hybrid diodes have been proven efficient for broadband terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (similar to 93%) and modulation rate (similar to 4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.
引用
收藏
页码：1953 / 1959
页数：7
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