Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

被引:43
作者
Balazs, Daniel M. [1 ]
Rizkia, Nisrina [1 ]
Fang, Hong-Hua [1 ]
Dirin, Dmitry N. [2 ,3 ]
Momand, Jamo [1 ]
Kooi, Bart J. [1 ]
Kovalenko, Maksym V. [2 ,3 ]
Loi, Maria Antonietta [1 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands
[2] Swiss Fed Inst Technol, Dept Chem & Appl Biosci, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
[3] Empa Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
基金
欧洲研究理事会;
关键词
colloidal quantum dot; field-effect transistor; colloidal ink; solution-phase ligand exchange; blade-coating; CHARGE-TRANSPORT; HIGH-MOBILITY; SOLAR-CELLS; NANOCRYSTALS; AMBIPOLAR; EXCHANGE; DEPOSITION; EMISSION; VOLTAGE; SOLIDS;
D O I
10.1021/acsami.7b16882
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Colloidal quantum dots are a class of solution processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.
引用
收藏
页码:5626 / 5632
页数:7
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