Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

被引:44
作者
Balazs, Daniel M. [1 ]
Rizkia, Nisrina [1 ]
Fang, Hong-Hua [1 ]
Dirin, Dmitry N. [2 ,3 ]
Momand, Jamo [1 ]
Kooi, Bart J. [1 ]
Kovalenko, Maksym V. [2 ,3 ]
Loi, Maria Antonietta [1 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands
[2] Swiss Fed Inst Technol, Dept Chem & Appl Biosci, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
[3] Empa Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
基金
欧洲研究理事会;
关键词
colloidal quantum dot; field-effect transistor; colloidal ink; solution-phase ligand exchange; blade-coating; CHARGE-TRANSPORT; HIGH-MOBILITY; SOLAR-CELLS; NANOCRYSTALS; AMBIPOLAR; EXCHANGE; DEPOSITION; EMISSION; VOLTAGE; SOLIDS;
D O I
10.1021/acsami.7b16882
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Colloidal quantum dots are a class of solution processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.
引用
收藏
页码:5626 / 5632
页数:7
相关论文
共 38 条
[1]   Reducing charge trapping in PbS colloidal quantum dot solids [J].
Balazs, D. M. ;
Nugraha, M. I. ;
Bisri, S. Z. ;
Sytnyk, M. ;
Heiss, W. ;
Loi, M. A. .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[2]   Stoichiometric control of the density of states in PbS colloidal quantum dot solids [J].
Balazs, Daniel M. ;
Bijlsma, Klaas I. ;
Fang, Hong-Hua ;
Dirin, Dmitry N. ;
Dobeli, Max ;
Kovalenko, Maksym V. ;
Loi, Maria A. .
SCIENCE ADVANCES, 2017, 3 (09)
[3]   Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Super lattices [J].
Balazs, Daniel M. ;
Dirin, Dmitry N. ;
Fang, Hong-Hua ;
Protesescu, Loredana ;
ten Brink, Gert H. ;
Kooi, Bart J. ;
Koyalenko, Maksym V. ;
Loi, Maria Antonietta .
ACS NANO, 2015, 9 (12) :11951-11959
[4]   Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals [J].
Bisri, Satria Zulkarnaen ;
Piliego, Claudia ;
Yarema, Maksym ;
Heiss, Wolfgang ;
Loi, Maria Antonietta .
ADVANCED MATERIALS, 2013, 25 (31) :4309-4314
[5]   Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange [J].
Brown, Patrick R. ;
Kim, Donghun ;
Lunt, Richard R. ;
Zhao, Ni ;
Bawendi, Moungi G. ;
Grossman, Jeffrey C. ;
Bulovic, Vladimir .
ACS NANO, 2014, 8 (06) :5863-5872
[6]   Lead Halide Perovskites and Other Metal Halide Complexes As Inorganic Capping Ligands for Colloidal Nanocrystals [J].
Dirin, Dmitry N. ;
Dreyfuss, Sebastien ;
Bodnarchuk, Maryna I. ;
Nedelcu, Georgian ;
Papagiorgis, Paris ;
Itskos, Grigorios ;
Kovalenko, Maksym V. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2014, 136 (18) :6550-6553
[7]   Composition-matched molecular "solders" for semiconductors [J].
Dolzhnikov, Dmitriy S. ;
Zhang, Hao ;
Jang, Jaeyoung ;
Son, Jae Sung ;
Panthani, Matthew G. ;
Shibata, Tomohiro ;
Chattopadhyay, Soma ;
Talapin, Dmitri V. .
SCIENCE, 2015, 347 (6220) :425-428
[8]   Colloidal PbS nanocrystals with size-tunable near-infrared emission: Observation of post-synthesis self-narrowing of the particle size distribution [J].
Hines, MA ;
Scholes, GD .
ADVANCED MATERIALS, 2003, 15 (21) :1844-1849
[9]  
Horowitz G, 1998, ADV MATER, V10, P923, DOI 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO
[10]  
2-W