Enhancing Photostability of Perovskite Solar Cells by Eu(TTA)2(Phen)MAA Interfacial Modification

被引:50
作者
Bi, Wenbo [1 ]
Wu, Yanjie [1 ]
Zhang, Boxue [1 ]
Jin, Junjie [1 ]
Li, Hao [1 ]
Liu, Le [1 ]
Xu, Lin [1 ]
Dai, Qilin [2 ]
Chen, Cong [1 ]
Song, Hongwei [1 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qanjin St, Changchun 130012, Jilin, Peoples R China
[2] Jackson State Univ, Dept Chem Phys & Atmospher Sci, Jackson, MS 39217 USA
基金
中国国家自然科学基金;
关键词
perovskite solar cells; interfacial modification; downconversion; Eu(TTA)(2)(Phen)MAA; photostability; PERFORMANCE ENHANCEMENT; HIGH-EFFICIENCY; STABILITY; OXIDE; PHOTOLUMINESCENCE; PASSIVATION;
D O I
10.1021/acsami.9b00528
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic-inorganic lead halide perovskite solar cells (PSCs) exhibit spectacular changes in the photovoltaic area, but they still face the challenges of full spectral utilization and photostability under continuous light irradiation. The ultraviolet (UV) part in sunlight could induce oxygen vacancy in the mesoporous TiO2 (m-TiO2) layer, resulting in the degradation of perovskite photoactive films and the rapidly decreased device performance. In this work, we demonstrate that an effective luminescent downconversion material, Eu(TTA)(2)(Phen)MAA (ETPM), can be used as an interfacial modifier between the m-TiO2 layer and the perovskite photoactive layer to improve the power conversion efficiency (PCE) from 17.00 to 19.07%. The improved device performance can be ascribed to the effective utilization of incident UV light and reduced carrier recombination. Meanwhile, the conversion of the UV light by ETPM could inhibit the stability loss of the device under irradiation. As a result, the modified PSCs can maintain 86% of their initial value under continuous light soaking for 100 h, higher than that of 40% for the control device. This work indicates that the introduction of the luminescent downconversion material ETPM can successfully improve the PCE and photostability of PSCs.
引用
收藏
页码:11481 / 11487
页数:7
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