Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature

被引：27

作者：

Verucchi, Roberto ^{[1
]}

Aversa, Lucrezia ^{[1
]}

Nardi, Marco V. ^{[1
]}

Taioli, Simone ^{[2
,3
,4
,5
]}

Silvio a Beccara ^{[2
,3
,4
]}

Alfe, Dario ^{[6
,7
,8
]}

Nasi, Lucia ^{[9
]}

Rossi, Francesca ^{[9
]}

Salviati, Giancarlo ^{[9
]}

Iannotta, Salvatore ^{[9
]}

机构：

[1] IMEM CNR, Sez FBK Trento, Ist Mat Elettron & Magnetismo, I-38123 Trento, Italy

[2] FBK CMM, Interdisciplinary Lab Computat Sci, I-38123 Trento, Italy

[3] Univ Trento, Dept Phys, I-38123 Trento, Italy

[4] Ist Nazl Fis Nucl, Sez Perugia, I-06123 Perugia, Italy

[5] Univ Bologna, Dipartimento Chim, I-40126 Bologna, Italy

[6] UCL, Dept Earth Sci, London WC1E 6BT, England

[7] UCL, Dept Phys & Astron, London WC1E 6BT, England

[8] UCL, London Ctr Nanotechnol, London WC1E 6BT, England

[9] IMEM CNR, Ist Mat Elettron & Magnetismo, I-43124 Parma, Italy

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 42期

基金：

英国工程与自然科学研究理事会;

关键词：

MOLECULAR-DYNAMICS; CHARGE-TRANSFER; C-60; IMPACTS; SIMULATIONS; ADSORPTION; GROWTH; SI;

D O I：

10.1021/ja307804v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C-60) supersonic beam. Chemical processes, such as C-60 rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.

引用

页码：17400 / 17403

页数：4

共 28 条

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