Atomic resolution of nitrogen-doped graphene on Cu foils

被引：10

作者：

Wang, Chundong ^{[1
,2
]}

Schouteden, Koen ^{[2
]}

Wu, Qi-Hui ^{[3
]}

Li, Zhe ^{[2
]}

Jiang, Jianjun ^{[1
]}

Van Haesendonck, Chris ^{[2
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Katholieke Univ Leuven, Dept Phys & Astron, Lab Solid State Phys & Magnetism, B-3001 Leuven, Belgium

[3] Quanzhou Normal Univ, Dept Chem Mat, Coll Chem Engn & Mat Sci, Quanzhou 362000, Peoples R China

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 36期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

atomic resolution; nitrogen-doped graphene; Cu; STM; STS; TUNNELING SPECTROSCOPY; EPITAXIAL GRAPHENE; COPPER FOILS; HIGH-QUALITY; CARBON; GROWTH; FILMS; TRANSPORT; CU(111); UNIFORM;

D O I：

10.1088/0957-4484/27/36/365702

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.

引用

页数：9

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