Gate oxide reliability improvement related to dry local oxidation of silicon

被引：1

作者：

Bellutti, P

Zorzi, N

Verzellesi, G ^{[1
]}

机构：

[1] Univ Trent, Dept Mat Engn, I-38050 Trento, Italy

[2] Ist Ric Sci & Tecnol, ITC, I-38050 Trento, Italy

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(98)00221-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conventional wet one. The obtained improvement is suggested to occur because of a better oxide quality in the active region border due to the absence of the characteristic defects induced by wet local oxidation. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：181 / 185

页数：5

共 9 条

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