Bias-enhanced nucleation and growth of the aligned carbon nanotubes with open ends under microwave plasma synthesis

被引：141

作者：

Tsai, SH ^{[1
]}

Chao, CW ^{[1
]}

Lee, CL ^{[1
]}

Shih, HC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aligned carbon nanotubes with open ends have been fabricated on silicon wafer in one step using a microwave plasma enhanced chemical vapor deposition system with a mixture of methane and hydrogen as precursors. High concentration hydrogen plasma and high negative bias voltage to the substrate induce anisotropic etching of carbon nanotubes and can effectively reduce the randomly oriented carbon nanotubes. The mechanism of aligned carbon nanotubes with open ends is proposed in this letter. (C) 1999 American Institute of Physics. [S0003-6951(99)02223-8].

引用

页码：3462 / 3464

页数：3

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