Functional Ferroic Domain Walls for Nanoelectronics

被引：62
作者：
Sharma, Pankaj [1 ,2 ]
Schoenherr, Peggy [1 ]
Seidel, Jan [1 ,2 ]
机构：
[1] UNSW Sydney, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] UNSW Sydney, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia
来源：
MATERIALS | 2019年 / 12卷 / 18期
基金：
澳大利亚研究理事会;
关键词：
ferroelectrics; multiferroics; domain walls; topological defects; nanoelectronics; LITHIUM-NIOBATE CRYSTALS; NEGATIVE-CAPACITANCE; FERROELECTRIC CERAMICS; ENCOUNTERING DOMAINS; SINGLE-CRYSTALS; ELECTRIC-FIELD; POLARIZATION; CONDUCTION; LIGHT; GENERATION;
D O I：
10.3390/ma12182927
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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页数：25
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