Growth and characterization of the coexistence of vertically aligned and twinned V-shaped RuO2 nanorods on nanostructural TiO2 template

被引:12
作者
Chen, C. A. [1 ]
Chen, Y. M. [1 ]
Chen, K. Y. [1 ]
Chi, J. K. [1 ]
Huang, Y. S. [1 ]
Tsai, D. S. [2 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan
关键词
X-ray diffraction; Nanostructures; Electron microscopy; Metalorganic chemical vapor deposition; Nanomaterials; Oxides; CHEMICAL-VAPOR-DEPOSITION; RUTHENIUM DIOXIDE NANORODS; CORE-SHELL NANOWIRES; THIN-FILMS; CHLORINE EVOLUTION; FIELD-EMISSION; OXIDE; NANOTUBES; IRO2; NANOCRYSTALS;
D O I
10.1016/j.jallcom.2009.06.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the growth and characterization of coexistence of vertically aligned and twinned V-shaped RuO2 nanorods (NRs) The well-aligned RuO2 NRs were grown on top of rutile (R) phase TiO2 NRs sitting on sapphire (SA) (100) substrate via metal-organic chemical vapor deposition (MOCVD) by using bis(ethylcyclopentadienyl) ruthenium (II) and titanium-tetraisopropoxide (TTIP, Ti[OCH(CH3)(2)](4)) as source reagents The surface morphology, structural, and spectroscopic properties of the as-deposited nanocrystals (NCs) were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), micro-Raman spectroscopy, transmission electron microscopy (TEM) and selected-area electron diffractometry (SAED). The FESEM images and XRD patterns indicated growth of vertically aligned RuO2(001) and V-shaped RuO2(101) NRs on top of R-TiO2 NRs. The Raman spectrum indicated the formation of high quality RuO2 NCs on rutile phase of TiO2 NRs. TEM and SAED characterizations of V-shaped RuO2 NRs showed that the nanorods were crystalline RuO2 with a twin plane of (101) and twin direction of [(1) over bar 01] at the V-junction The probable mechanisms for the formation of well-aligned RuO2 NRs are discussed (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:524 / 528
页数:5
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