Boron removal from molten silicon using CaO-SiO2-BaO-CaF2 slag

被引:6
作者
Sun, Jin-ling [1 ]
Jie, Jin-chuan [1 ]
Zou, Qing-chuan [1 ]
Guo, Li-juan [2 ]
Cao, Zhi-qiang [1 ]
Wang, Tong-min [1 ]
Li, Ting-ju [1 ]
机构
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] TDK Dalian Corp, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
metallurgical silicon; boron removal; CaO-SiO2-BaO-CaF2; METALLURGICAL GRADE SILICON; FLUX; THERMODYNAMICS; VISCOSITY; SYSTEM;
D O I
10.1016/S1003-6326(16)64464-3
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
The distribution coefficient (L-B) of boron between CaO-SiO2-BaO-CaF2 slag and silicon was investigated using electromagnetic induction melting for the purpose of improving the boron removal fraction. The dependence of the boron distribution coefficient between slag and silicon on the fundamental parameters of CaO to SiO2 mass ratio and refining time and the additions of BaO and CaF2 to the slag was discussed. The results show that L-B can be increased by adding BaO and CaF2 to CaO-SiO2 slag. The maximum value of L-B (6.94) is obtained when the CaO to SiO2 mass ratio is 1.1:1 and the contents of BaO and CaF2 are fixed at 15% and 20%, respectively. Increasing the refining time increases the L-B. After the slag treatment is performed twice, the boron content of the silicon is successfully reduced from 3.5x10(-5) to 3.7x10(-6), and the removal fraction of boron reaches 89.4%.
引用
收藏
页码:3299 / 3304
页数:6
相关论文
共 21 条
[11]   Refining of metallurgical silicon by directional solidification [J].
Martorano, M. A. ;
Ferreira Neto, J. B. ;
Oliveira, T. S. ;
Tsubaki, T. O. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (03) :217-226
[12]   Thermodynamics of solar-grade-silicon refining [J].
Morita, K ;
Miki, T .
INTERMETALLICS, 2003, 11 (11-12) :1111-1117
[13]   Boron removal in molten silicon by a steam-added plasma melting method [J].
Nakamura, N ;
Baba, H ;
Sakaguchi, Y ;
Kato, Y .
MATERIALS TRANSACTIONS, 2004, 45 (03) :858-864
[14]   THERMODYNAMICS FOR REMOVAL OF BORON FROM METALLURGICAL SILICON BY FLUX TREATMENT [J].
SUZUKI, K ;
SUGIYAMA, T ;
TAKANO, K ;
SANO, N .
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1990, 54 (02) :168-172
[15]   Development of a New Viscometer Based on Rotating Crucible Method and Viscosity Measurement of SiO2-CaO-CaF2 System [J].
Takeda, Osamu ;
Okawara, Taku ;
Sato, Yuzuru .
ISIJ INTERNATIONAL, 2012, 52 (09) :1544-1549
[16]   Removal of Boron from Molten Silicon Using CaO-SiO2 Based Slags [J].
Teixeira, Leandro Augusto Viana ;
Morita, Kazuki .
ISIJ INTERNATIONAL, 2009, 49 (06) :783-787
[17]   Behavior and State of Boron in CaO-SiO2 Slags during Refining of Solar Grade Silicon [J].
Teixeira, Leandro Augusto Viana ;
Tokuda, Yomei ;
Yoko, Toshinobu ;
Morita, Kazuki .
ISIJ INTERNATIONAL, 2009, 49 (06) :777-782
[18]   Boron removal in purifying metallurgical grade silicon by CaO-SiO2 slag refining [J].
Wu, Ji-jun ;
Li, Yan-long ;
Ma, Wen-hui ;
Wei, Kui-xian ;
Yang, Bin ;
Dai, Yong-nian .
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2014, 24 (04) :1231-1236
[19]   Study of boron removal from molten silicon by slag refining under atmosphere [J].
Zhang, Lei ;
Tan, Yi ;
Li, Jiayan ;
Liu, Yao ;
Wang, Dengke .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (06) :1645-1649
[20]   Separation of Phosphorus from silicon by induction vacuum refining [J].
Zheng, Song-Sheng ;
Engh, Thorvald Abel ;
Tangstad, Merete ;
Luo, Xue-Tao .
SEPARATION AND PURIFICATION TECHNOLOGY, 2011, 82 :128-137