Fully Integrated Microscale Quasi-2D Crystalline Molecular Field-Effect Transistors

被引:13
作者
Bandari, Vineeth Kumar [1 ,2 ,3 ]
Gu, Yue [1 ,3 ]
Shi, Subao [1 ,3 ]
Nan, Yang [1 ,2 ,3 ]
He, Keqiong [4 ]
Li, Yang [1 ,3 ]
Bandari, Nooshin [1 ,3 ]
Moradi, Somayeh [1 ,2 ,3 ]
Tian, Hongkun [4 ]
Zhu, Feng [1 ,2 ,3 ]
Geng, Yanhou [5 ,6 ]
Yan, Donghang [4 ]
Schmidt, Oliver G. [1 ,2 ,3 ]
机构
[1] Tech Univ Chemnitz, Mat Syst Nanoelect, D-09107 Chemnitz, Germany
[2] Tech Univ Chemnitz, Ctr Mat Architectures & Integrat Nanomembranes MA, D-09126 Chemnitz, Germany
[3] Leibniz IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[4] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Jilin, Peoples R China
[5] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[6] Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
2D; integration; microscale transistors; molecular semiconductors; organic field-effect transistors; 25TH ANNIVERSARY ARTICLE; ULTRATHIN-FILM GROWTH; WEAK EPITAXY GROWTH; HIGH-PERFORMANCE; ORGANIC TRANSISTORS; HOLE MOBILITY; THIN-FILMS; POLYMER; SEMICONDUCTORS; ELECTRONICS;
D O I
10.1002/adfm.201903738
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolithic integration of microscale organic field-effect transistors (micro-OFETs) is the only and inevitable path toward low-cost large-area electronics and displays. However, to date, such an ultimate technology has not yet evolved due to challenges in positioning and patterning highly crystalline microscale molecular layers as well as in developing micrometer scale integration schemes. In this work, by mastering the local growth of molecular semiconductors on pre-defined terraces, single-crystal quasi-2D molecular layers tens of square micrometers in size are created in dense periodic arrays on a Si substrate. Nondestructive photolithographic processes are developed to pattern micro-OFETs with mobilities up to 34.6 cm(2) V-1 s(-1). This work demonstrates the feasibility to integrate arrays of short-channel micro-OFETs into electronic circuitry by highly parallel and size scalable fabrication technologies.
引用
收藏
页数:9
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