High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

被引：158

作者：

Feng, Dazeng ^{[1
]}

Liao, Shirong ^{[1
]}

Dong, Po ^{[1
]}

Feng, Ning-Ning ^{[1
]}

Liang, Hong ^{[1
]}

Zheng, Dawei ^{[1
]}

Kung, Cheng-Chih ^{[1
]}

Fong, Joan ^{[1
]}

Shafiiha, Roshanak ^{[1
]}

Cunningham, Jack ^{[2
]}

Krishnamoorthy, Ashok V. ^{[2
]}

Asghari, Mehdi ^{[1
]}

机构：

[1] Kotura Inc, Monterey Pk, CA 91754 USA

[2] Sun Microsyst Inc, San Diego, CA 92121 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

data communication; germanium; high-speed optical techniques; integrated optics; optical filters; optical receivers; optical waveguides; photodetectors; silicon-on-insulator; wavelength division multiplexing;

D O I：

10.1063/1.3279129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only 0.8x10 mu m(2), greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated silicon photonics receivers for multichannel terabit data transmission applications.

引用

页数：3

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