Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs

被引：1

作者：

Onomitsu, K

Kawaharazuka, A

Okabe, T

Makimoto, T

Saito, H

Horikoshi, Y

机构：

[1] Waseda Univ, Sch Sci & Engn, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan

[3] NTT Corp, Basic Res Labs, Kanagawa 2430124, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 09期

关键词：

atomic-layer doping; MOVPE; GaAs; photoluminescence; isoelectronic traps; nitrogen pairs; electric field dependence;

D O I：

10.1143/JJAP.41.5503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (00 1) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence clue to tile nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that Of Uniformly doped samples against an applied electric field, This stability is observed only when the electric field is applied in either the [110] or [(1) over bar 10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.

引用

页码：5503 / 5506

页数：4

共 12 条

[1] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[2] SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN ATOMIC-LAYER-DOPED GAAS [J].

MAKIMOTO, T ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :688-690

[3] Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAS/GaAs single quantum wells [J].

Makimoto, T ;

Kobayashi, N .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (09) :1527-1530

[4] Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells [J].

Makimoto, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1299-1301

[5] Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE [J].

Makimoto, T ;

Saito, H ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1694-1697

[6] NITRIDATION OF GAAS-SURFACES USING NITROGEN THROUGH A HOT TUNGSTEN FILAMENT [J].

MAKIMOTO, T ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :548-550

[7] INTERMEDIATE RANGE BETWEEN N-DOPED GAP AND GAP1-XNX ALLOYS - DIFFERENCE IN OPTICAL-PROPERTIES [J].

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

ITO, R ;

SHIRAKI, Y .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :87-92

[8]

ONOMITSU K, 2001, IN PRESS P 27 INT S, P167

[9] Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE [J].

Saito, H ;

Makimoto, T ;

Kobayashi, N .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :372-376

[10] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

HOPFIELD, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :680-&

← 1 2 →