Effect of Varying Threshold Voltage on Efficiency of CMOS Rectifiers for Piezoelectric Energy Harvesting Applications

被引：2

作者：

Li, Xingwen ^{[1
]}

Nabavi, Seyedfakhreddin ^{[2
]}

Zhang, Lihong ^{[2
]}

机构：

[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON, Canada

[2] Mem Univ Newfoundland, Dept Elect & Comp Engn, St John, NF, Canada

来源：

2020 IEEE CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE) | 2020年

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

Piezoelectric energy harvester; threshold voltage; bridge rectifier; efficiency; MEMS; low voltage; cross-coupled CMOS;

D O I：

10.1109/ccece47787.2020.9255679

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, the efficiency of a conventional cross-coupled gate CMOS bridge rectifier used in MEMS (microelectromechanical system) piezoelectric energy harvesters is investigated. The MOSFET threshold voltage is varied between 10 mV and 800 mV to evaluate the performance of the circuit for various threshold voltage levels. The circuit is simulated using the 130 nm CMOS technology process for each MOSFET to generate performance metrics for the rectifier. The results are evaluated for optimal load resistance, and it is confirmed that a lower threshold voltage results in significant improvements to the efficiency of the rectifier at lower input voltage amplitudes, with up to 62% at 0.5 V input amplitude when a smoothing capacitor is placed across the load.

引用

页数：4

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