Selective reduction for hole-doping in Cu1-xTlx-1223 (Cu1-xTlxBa2Ca2Cu3O10-y) system with Tc > 132 K

被引：21

作者：

Ihara, H

Tanaka, K

Tanaka, Y

Iyo, A

Terada, N

Tokumoto, M

Tateai, F

Kawamura, M

Ishida, K

Miyashita, S

Watanabe, T

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Sci Univ Tokyo, Noda, Chiba 2788510, Japan

[3] CREST, Noda, Chiba 2788510, Japan

来源：

PHYSICA B | 2000年 / 284卷

关键词：

hole doping; Cu-1223; CuTl-1223; selective reduction;

D O I：

10.1016/S0921-4526(99)02435-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new hale-doping process due to the selective reduction of Tl in the charge reservoir layer is discovered in Cu1-xTlxBa2Ca2Cu3O10-y (Cu1-xTlx-1223) system. The process is very effective for the enhancement of T-c up to 132 K. The selective reduction effect is related to the reduction of Tl ions from 3 + valence to 1 + and the energy shift of Tl 6s level from above to below the Fermi level, The mechanism of the hole-doping is explained by electron transfer from Cu 3d (x(2)-y(2)) orbital to Tl 6s orbital. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1085 / 1086

页数：2

Selective reduction for hole-doping in Cu1-xTlx-1223 (Cu1-xTlxBa2Ca2Cu3O10-y) system with Tc &gt; 132 K

Selective reduction for hole-doping in Cu1-xTlx-1223 (Cu1-xTlxBa2Ca2Cu3O10-y) system with Tc > 132 K