Some physical investigations on ZnS1-xSex films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme

被引:11
作者
Fridjine, S. [1 ]
Touihri, S. [1 ]
Boubaker, K. [1 ]
Amlouk, M. [1 ]
机构
[1] UPDS Fac Sci Tunis, Tunis, Tunisia
关键词
X-ray diffraction; Phtothermal protocol; Boubaker polynomials expansion scheme; Surface structure; Chemical vapor deposition process; Semiconducting II-VI materials; OPTICAL-PROPERTIES; THIN-FILMS; GROWTH; LAYERS;
D O I
10.1016/j.jcrysgro.2009.10.039
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
ZnS1-xSex thin films have been grown by selenization process, applied to ZnS sprayed thin films deposited on Pyrex glass substrates at 550 degrees C. The crystal structure and surface morphology were investigated by the XRD technique and by the atomic force microscopy. This structural study shows that selenium-free (x = 0) ZnS thin films, prepared at substrate temperature T-S = 450 degrees C, were well crystallized in cubic structure and oriented preferentially along (1 1 1) direction. The thermal and mechanical properties were also investigated using a photothermal protocol along with Vickers hardness measurements. On the other hand, the analyze of the transmittance T(lambda) and the reflectance R(lambda), optical measurements of these films depicts a decrease in the band gap energy value E-g with an increase in Se content (x). Indeed, E-g values vary from 3.6 to 3.1 eV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:202 / 208
页数:7
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