Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds

被引：5

作者：

Chiu, YS ^{[1
]}

Ya, MH

Su, WS

Chen, TT

Chen, YF

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1532108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropic property of type-II GaAs/GaAsSb heterostructures was studied by photoluminescence (PL) and photoconductivity (PC). It was found that the PL and PC spectra exhibit a strong in-plane polarization with respect to (011) axis with polarization degrees up to 40%. We showed that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells was attributed to the intrinsic property of the orientation of chemical bonds at heterointerfaces. (C) 2002 American Institute of Physics.

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页码：4943 / 4945

页数：3

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