Deuterium Adsorption on Free-Standing Graphene

被引：21

作者：

Abdelnabi, Mahmoud Mohamed Saad ^{[1
]}

Izzo, Chiara ^{[1
]}

Blundo, Elena ^{[1
]}

Betti, Maria Grazia ^{[1
,2
]}

Sbroscia, Marco ^{[1
]}

Di Bella, Giulia ^{[1
]}

Cavoto, Gianluca ^{[1
,2
]}

Polimeni, Antonio ^{[1
]}

Garcia-Cortes, Isabel ^{[3
]}

Rucandio, Isabel ^{[3
]}

Morono, Alejandro ^{[3
]}

Hu, Kailong ^{[4
]}

Ito, Yoshikazu ^{[4
]}

Mariani, Carlo ^{[1
,2
]}

机构：

[1] Sapienza Univ Roma, Dipartimento Fis, Ple Aldo Moro 2, I-00185 Rome, Italy

[2] Sapienza Univ Roma, INFN Sez Roma 1, Ple Aldo Moro 2, I-00185 Rome, Italy

[3] CIEMAT, Ave Complutense 40, Madrid 28040, Spain

[4] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

NANOMATERIALS | 2021年 / 11卷 / 01期

关键词：

nano porous graphene; deuterium; graphane; XPS; UPS; Raman;

D O I：

10.3390/nano11010130

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A suitable way to modify the electronic properties of graphene-while maintaining the exceptional properties associated with its two-dimensional (2D) nature-is its functionalisation. In particular, the incorporation of hydrogen isotopes in graphene is expected to modify its electronic properties leading to an energy gap opening, thereby rendering graphene promising for a widespread of applications. Hence, deuterium (D) adsorption on free-standing graphene was obtained by high-energy electron ionisation of D2 and ion irradiation of a nanoporous graphene (NPG) sample. This method allows one to reach nearly 50 at.% D upload in graphene, higher than that obtained by other deposition methods so far, towards low-defect and free-standing D-graphane. That evidence was deduced by X-ray photoelectron spectroscopy of the C 1s core level, showing clear evidence of the D-C sp3 bond, and Raman spectroscopy, pointing to remarkably clean and low-defect production of graphane. Moreover, ultraviolet photoelectron spectroscopy showed the opening of an energy gap in the valence band. Therefore, high-energy electron ionisation and ion irradiation is an outstanding method for obtaining low defect D-NPG with a high D upload, which is very promising for the fabrication of semiconducting graphane on large scale.

引用

页码：1 / 14

页数：14

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