Positronics and nanotechnologies: Possibilities of studying nanoobjects in materials and nanomaterials by the method of positron-annihilation spectroscopy

被引：4

作者：

Grafutin, V. I. ^{[1
]}

Ilyukhina, O. V. ^{[1
]}

Myasishcheva, G. G. ^{[1
]}

Prokopiev, E. P. ^{[1
,2
]}

Timoshenkov, S. P. ^{[2
]}

Funtikov, Yu. V. ^{[1
]}

Burcl, R. ^{[3
]}

机构：

[1] Inst Theoret & Expt Phys, Moscow 117259, Russia

[2] Moscow State Inst Elect Technol MIET, Moscow 124498, Russia

[3] Inst Energy, Directorate Gen Joint Res Ctr, European Commiss, NL-1755 ZG Petten, Netherlands

来源：

PHYSICS OF ATOMIC NUCLEI | 2009年 / 72卷 / 10期

关键词：

TEMPERATURE-DEPENDENCE; SINGLE-CRYSTALS; SILICON; DEFECTS; QUARTZ; SEMICONDUCTORS; PROTONS; ATOM;

D O I：

10.1134/S1063778809100081

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The method of positron-annihilation spectroscopy is shown to be one of the most efficient methods for determining sizes of nanoobjects (vacancies, vacancy clusters); free volumes of pores, cavities, and hollows; and their concentrations and chemical composition at the point of annihilation in porous systems and some defective materials (and generally in a lot of technologically important materials and nanomaterials). Experimental investigations of nanodefects in porous silicon, silicon, and quartz single crystals irradiated with protons and in quartz powders are briefly reviewed.

引用

页码：1672 / 1681

页数：10

共 42 条

[1]

Arefiev K. P., 1983, IZV VYSSH UCHEBN ZAV, P117

[2]

BARTENEV GM, 1968, SOV PHYS USP, V11, P72

[3]

Batavin V. V., 1980, MIKROELEKTRONIKA, V9, P120

[4]

BOURGOIN J, 1985, SPRINGER SER SOLID S, V35

[5]

BRITKOV OM, 2007, PETERBURG ZH ELEKT, P15

[6]

BRITKOV OM, 2004, VOPROSY ATOM NAUKI T, P40

[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[8] DEFECTS AND OXYGEN IN SILICON STUDIED BY POSITRONS [J].

DANNEFAER, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02) :481-491

[9] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS [J].

DANNEFAER, S ;

KERR, D ;

HOGG, BG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :155-160

[10] A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON [J].

DANNEFAER, S ;

FRUENSGAARD, N ;

KUPCA, S ;

HOGG, B ;

KERR, D .

CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) :451-459

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