100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

被引：79

作者：

Chen, Hongtao ^{[1
]}

Galili, M. ^{[2
]}

Verheyen, P. ^{[3
]}

De Heyn, P. ^{[3
]}

Lepage, G. ^{[3
]}

De Coster, J. ^{[3
]}

Balakrishnan, S. ^{[3
]}

Absil, P. ^{[3
]}

Oxenlowe, L. ^{[2
]}

Van Campenhout, J. ^{[3
]}

Roelkens, G. ^{[1
]}

机构：

[1] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[2] Tech Univ Denmark, DTU Fotonik, DK-2800 Lyngby, Denmark

[3] Interuniv Microelect Ctr, B-3000 Leuven, Belgium

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2017年 / 35卷 / 04期

关键词：

Germanium; integrated optoelectronics; optical communications; photodetectors; SILICON; BANDWIDTH; PHOTODIODE;

D O I：

10.1109/JLT.2016.2593942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 mu m long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

引用

页码：722 / 726

页数：5

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