Response behaviour of tin oxide thin film gas sensors grown by MOCVD

被引：81
作者：
Brown, JR
Haycock, PW [1 ]
Smith, LM
Jones, AC
Williams, EW
机构：
[1] Univ Keele, Sch Chem & Phys, Birchall Ctr Inorgan Chem & Mat Sci, Keele ST5 5BG, Staffs, England
[2] Epichem Ltd, Wirral L69 3QF, Merseyside, England
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 63卷 / 1-2期
基金：
英国工程与自然科学研究理事会;
关键词：
gas sensors; thin film sensors; tin oxide; MOCVD; hydrogen sulphide;
D O I：
10.1016/S0925-4005(00)00306-3
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Tin oxide is the most widely studied semiconducting oxide for use in gas sensor applications. However, the majority of previous study has been centred around porous media produced as thick films or thin sputtered films. This paper concerns the behaviour of relatively non-porous thin films grown by metal-organic chemical vapour deposition (MOCVD) and presents their response behaviour to the hazardous gases H2S, CH4 and NO2. The films were produced from tetratertiarybutoxytin at 350 degrees C. They were found to act as selective H2S sensors at room temperature and show sensitive responses to all three gases above 200 degrees C. The response to all gases is a reduction in resistance and the effect of water vapour on the response is small. (C) 2000 Elsevier Science S.A. All rights reserved.
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收藏
页码：109 / 114
页数：6
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