Transparent Inorganic Copper Bromide (CuBr) p-Channel Transistors Synthesized From Solution at Room Temperature

被引：21

作者：

Zhu, Huihui ^{[1
]}

Liu, Ao ^{[1
]}

Noh, Yong-Young ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期

关键词：

Inorganic p-type semiconductor; room temperature; solution process; thin-film transistor; THIN-FILM TRANSISTORS; OXIDE;

D O I：

10.1109/LED.2019.2904737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transparent polycrystalline p-channel copper bromide (CuBr) thin-film transistors (TFTs) are fabricated using a simple one-step spin coating at room temperature. Optimized CuBr TFTs operate in depletion mode with an on-voltage of 35 V and exhibit a hole mobility of 0.15 cm(2) V-1 s(-1), high on/off current ratio similar to 10(4) and cycling bias sweep/air stabilities. The performance is superior to that of most solution-processed p-type oxide TFTs, highlighting CuBr as a promising p-type candidate for next-generation printable transparent electronics.

引用

页码：769 / 772

页数：4

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