Transparent Inorganic Copper Bromide (CuBr) p-Channel Transistors Synthesized From Solution at Room Temperature

被引：21
|
作者：
Zhu, Huihui [1 ]
Liu, Ao [1 ]
Noh, Yong-Young [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期
关键词：
Inorganic p-type semiconductor; room temperature; solution process; thin-film transistor; THIN-FILM TRANSISTORS; OXIDE;
D O I：
10.1109/LED.2019.2904737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transparent polycrystalline p-channel copper bromide (CuBr) thin-film transistors (TFTs) are fabricated using a simple one-step spin coating at room temperature. Optimized CuBr TFTs operate in depletion mode with an on-voltage of 35 V and exhibit a hole mobility of 0.15 cm(2) V-1 s(-1), high on/off current ratio similar to 10(4) and cycling bias sweep/air stabilities. The performance is superior to that of most solution-processed p-type oxide TFTs, highlighting CuBr as a promising p-type candidate for next-generation printable transparent electronics.
引用
收藏
页码：769 / 772
页数：4
相关论文
共 50 条
  • [31] Doping of Copper(I) Thiocyanate (CuSCN) with Metal Chlorides for p-Channel Thin-Film Transistors
    Waiprasoet, Saran
    Kidkhunthod, Pinit
    Nakajima, Hideki
    Ittisanronnachai, Somlak
    Prayongkul, Pongkamon
    Chattakoonpaisarn, Chitsanucha
    Songkerdthong, Jetnipat
    Sukpoonprom, Patipan
    Sudyoadsuk, Taweesak
    Promarak, Vinich
    Pattanasattayavong, Pichaya
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (09) : 6837 - 6848
  • [32] Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor
    Lee, Han Ju
    Lee, Seonjeong
    Ji, Yena
    Cho, Kyung Gook
    Choi, Kyoung Soon
    Jeon, Cheolho
    Lee, Keun Hyung
    Hong, Kihyon
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (43) : 40243 - 40251
  • [33] Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors
    He, Zhengran
    Zhang, Ziyang
    Asare-Yeboah, Kyeiwaa
    Bi, Sheng
    Chen, Jihua
    Li, Dawen
    POLYMERS, 2021, 13 (03) : 1 - 13
  • [34] Charge Transfer Efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing
    Gow, J. P. D.
    Murray, N. J.
    Wood, D.
    Burt, D.
    Hall, D. J.
    Dryer, B.
    Holland, A. D.
    HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY VII, 2016, 9915
  • [35] MECHANISM OF ROOM-TEMPERATURE INSTABILITY OF P-CHANNEL SILICON GATE MOS-TRANSISTOR
    NAKAYAMA, H
    SHINDO, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C104 - C104
  • [36] Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors
    Letizia, Joseph A.
    Rivnay, Jonathan
    Facchetti, Antonio
    Ratner, Mark A.
    Marks, Tobin J.
    ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (01) : 50 - 58
  • [37] Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit
    Yang, Chang
    Kneiss, Max
    Lorenz, Michael
    Grundmann, Marius
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2016, 113 (46) : 12929 - 12933
  • [38] Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors
    Park, Taeho
    Lee, Jaehwan
    Son, Jaemin
    Jeon, Juhee
    Shin, Yeonwoo
    Cho, Kyoungah
    Kim, Sangsig
    IEEE ACCESS, 2022, 10 : 101458 - 101464
  • [39] Analysis of thermal distribution in low-temperature polycrystalline silicon p-channel thin film transistors
    Hashimoto, S
    Uraoka, Y
    Fuyuki, T
    Morita, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (1A): : 7 - 12
  • [40] Transparent solution LED fabricated from liquid polymer at room temperature
    不详
    MRS BULLETIN, 1999, 24 (07) : 3 - 3
12345