Transparent Inorganic Copper Bromide (CuBr) p-Channel Transistors Synthesized From Solution at Room Temperature

被引：21
|
作者：
Zhu, Huihui [1 ]
Liu, Ao [1 ]
Noh, Yong-Young [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期
关键词：
Inorganic p-type semiconductor; room temperature; solution process; thin-film transistor; THIN-FILM TRANSISTORS; OXIDE;
D O I：
10.1109/LED.2019.2904737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transparent polycrystalline p-channel copper bromide (CuBr) thin-film transistors (TFTs) are fabricated using a simple one-step spin coating at room temperature. Optimized CuBr TFTs operate in depletion mode with an on-voltage of 35 V and exhibit a hole mobility of 0.15 cm(2) V-1 s(-1), high on/off current ratio similar to 10(4) and cycling bias sweep/air stabilities. The performance is superior to that of most solution-processed p-type oxide TFTs, highlighting CuBr as a promising p-type candidate for next-generation printable transparent electronics.
引用
收藏
页码：769 / 772
页数：4
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