Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applications

被引:44
作者
Lee, Jaehyeong [2 ]
Lakshminarayan, N. [1 ,3 ]
Dhungel, Suresh Kumar [1 ]
Kim, Kyunghae [1 ]
Yi, Junsin [1 ]
机构
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, Kyeonggi Do, South Korea
[2] Kunsan Natl Univ, Sch Elect & Informat Engn, Kunsan 573701, Jeobuk, South Korea
[3] Madras Christian Coll, Dept Phys, Madras, Tamil Nadu, India
关键词
Solar cell; Crystalline silicon; High efficiency; Process optimization;
D O I
10.1016/j.solmat.2008.10.013
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The process conditions for a high-efficiency and low cost crystalline silicon solar cell were optimized. Novel approaches such as wafer cleaning and saw -damage removal using 0.5wt% of 2,4,6-trichloro-1,3,5-triazine, silicon surface texturing with optimized pyramid heights (similar to 5 mu m), and a third step of drive-in after phosphosilicate glass (PSG) removal followed by oxide removal were investigated. A simple method of chemical etching adopted for edge isolation was optimized with edge etching of 5-10 mu m, without any penetration of chemicals between the stacked wafers. The conversion efficiency, open-circuit voltage, short-circuit current, and fill factor of the cell fabricated with the optimized process were a maximum of 17.12%, 618.4 mV, 5.32 A, and 77% under AM1.5 conditions, respectively. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:256 / 261
页数:6
相关论文
共 15 条
[11]  
ROHATGI A, 2003, 3 WORLD C PHOT EN CO
[12]  
Schmidt W., 1992, P 2 WORLD REN EN C U, P240
[13]   High-efficiency low-cost integral screen-printing multicrystalline silicon solar cells [J].
Szlufcik, J ;
Duerinckx, F ;
Horzel, J ;
Van Kerschaver, E ;
Dekkers, H ;
De Wolf, S ;
Choulat, P ;
Allebe, C ;
Nijs, J .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 74 (1-4) :155-163
[14]   SHALLOW PHOSPHORUS DIFFUSION PROFILES IN SILICON [J].
TSAI, JCC .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1499-&
[15]  
WOLF S, 1986, SILICON PROCESSING V, V1, P516