Lead zirconate titanate and barium titanate bi-layer ferroelectric films on Si

被引:11
作者
Wang, Yingying [1 ,2 ,3 ]
Yan, Jing [1 ]
Cheng, Hongbo [1 ,4 ]
Chen, Ning [2 ]
Yan, Peng [2 ]
Yang, Feng [5 ]
Ouyang, Jun [1 ,3 ]
机构
[1] Shandong Univ, Sch Mat Sci & Engn, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Shandong, Peoples R China
[2] Shandong Univ, Sch Mech Engn, Jinan 250061, Shandong, Peoples R China
[3] Shandong Univ, Suzhou Inst, Suzhou 215123, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[5] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
Lead zirconate titanate (PZT); Barium titanate (BaTiO3); Bi-layer; Ferroelectric film; Si; Magnetron sputtering; PZT THIN-FILMS; ELECTRICAL-PROPERTIES; PIEZOELECTRIC CONSTANTS; TARGET; BIFEO3;
D O I
10.1016/j.ceramint.2019.01.237
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, a novel method is proposed to integrate ferroelectric lead zirconate titanate (PZT) films on Si with highly tunable functionalities, through bi-layering with a barium titanate (BTO) film. First of all, the BTO film acts as a growth-promotion template layer which has successfully lowered the in situ deposition temperature of a ferroelectric PZT film. The PZT/BTO bilayer film deposited at 350 degrees C on LaNiO3-buffered Si substrate displayed a room temperature remnant polarization similar to 24 mu C/cm(2), and its quality can be further improved via a rapid thermal annealing (RTP) process. Furthermore, by changing their thickness ratio, various ferroelectric hysteresis loops (P-E loops) can be created in the PZT/BTO films, thereby enabling a broad range of applications for this simple bi-layer structure. Examples including high performance piezoelectric energy harvesters and high energy density dielectric capacitors are demonstrated for the PZT/BTO bi-layer films.
引用
收藏
页码:9032 / 9037
页数:6
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