Temperature dependence of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two-dimensional electron system

被引：1

作者：

Ma, Hui ^{[1
]}

Jiang, Chongyun ^{[1
]}

Liu, Yu ^{[1
]}

Yu, Jinling ^{[1
]}

Chen, Yonghai ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5 | 2012年 / 400卷

关键词：

QUANTUM-WELLS; SPIN;

D O I：

10.1088/1742-6596/400/4/042041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structure inversion asymmetry (SIA) related circular photogalvanic effect (CPGE) has been investigated under near-infrared radiation at temperatures ranging from 80 K to 290 K in GaAs/Al0.3Ga0.7As heterostructures. The result shows nonmonotonic changes of CPGE with temperature variation; obviously larger signal at low temperature and sign inversions in the temperature range between 140 K and 170 K are observed. We suggest this result is not only related to the photoconductivity and Rashba spin splitting, but other factors superpose on them.

引用

页数：4

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