Study on the electrical transport properties of La2/3Ba1/3MnO3:Ag0.04/LaAlO3 (001) films

被引：1

作者：

Liu, Xiang ^{[1
]}

Zhao, Shuang ^{[1
]}

Zhang, Shao-Chun ^{[1
]}

机构：

[1] Kunming Univ Sci & Technol, Sch Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2017年 / 504卷

关键词：

La2/3Ba1/3MnO3:Ag-x; Electrical transport properties; Pulsed laser deposition technique; Metal-insulator transition temperature; TCR TEMPERATURE-COEFFICIENT; THIN-FILMS; AG; MAGNETORESISTANCE; RESISTIVITY; COMPOSITES;

D O I：

10.1016/j.physb.2016.10.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

La2/3Ba1/3MnO3: wt%Ag-x (LBMO:Ag-x, x=0.04) films were prepared on single crystalline (001)-orientated LaAlO3 substrates by pulsed laser deposition technique. All the samples show along the (00l) orientation in rhombohedral structure with R3c space group. The surface roughness (Ra), insulator-metal transition temperature (Tp) and resistivity at Tp (rho(Tp)) of the LBMO: Ag0.04 films reached optimal values of 3.29 nm, 288 K and 0.033 Omega cm at 740 degrees C, respectively. The improvement of electrical transport properties in the films are attributed to the optimal growth temperature and Ag-doping improve the microstructure of the surfaces, grain boundaries (GBs) in connectivity and better crystallization. In addition, the electrical conduction behaviors can be well fitted with the grain/domain boundary, electron-electron and magnon scattering mechanisms in the ferromagnetic metallic region (T < Tp), as well as with the adiabatic small polaron hopping mechanism in the paramagnetic insulating region (T > Tp).

引用

页码：92 / 95

页数：4

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