Coulomb repulsion effect on the tunnel current through the redox molecule in the weak tunneling limit

被引：12

作者：

Kuznetsov, A. M. ^{[1
]}

Medvedev, I. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119991, Russia

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.78.153403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects are predicted for electron tunneling through a one-level bridged contact immersed in the electrolyte solution at ambient conditions in the case of weak electronic interaction of the bridge molecule with the leads and strong electron-phonon coupling. They are (1) narrow-width (similar to k(B)T) Coulomb blockade peaks in the current/gate voltage dependence, (2) rectification due to the Coulomb repulsion, and (3) a number of peaks in the differential conductance for the one-level system. Unlike previous work, the number of these peaks can amount to four that is related with oxidized and reduced states of both ionization and affinity levels of the bridge molecule.

引用

页数：4

共 25 条

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