A 0.1 G-to-20 G integrated MEMS inertial sensor

被引:9
作者
Yamane, Daisuke [1 ,4 ]
Konishi, Toshifumi [2 ]
Matsushima, Takaaki [2 ]
Toshiyoshi, Hiroshi [3 ,4 ]
Masu, Kazuya [1 ,4 ]
Machida, Katsuyuki [1 ,2 ,4 ]
机构
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268503, Japan
[2] NTT Adv Technol Corp, Atsugi, Kanagawa 2430124, Japan
[3] Univ Tokyo, Meguro Ku, Tokyo 1538904, Japan
[4] JST, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
ACCELEROMETER; FABRICATION; INTERFACE;
D O I
10.7567/JJAP.54.087202
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents a novel integrated MEMS inertial sensor with a wide range of acceleration from 0.1G to 20 G (G = 9.8 m/s(2)) and with a design suitable for CMOS integration. Owing to the high-density of post-processed gold and the multi-metal layer technology, we have implemented different types of single-axis MEMS capacitive inertial sensors on a single chip of 4 x 4 mm(2) in area to obtain a wide sensing range. The estimated Brownian noise was between 82.4 nG/Hz(1/2) and 1.11 mu G/Hz(1/2). The experimental results show that the MEMS sensor has higher sensing resolution than those of conventional MEMS accelerometers. (C) 2015 The Japan Society of Applied Physics
引用
收藏
页数:4
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