Chemical control of local doping in organic thin-film transistors: From depletion to enhancement

被引：63

作者：

Pacher, Peter ^{[2
]}

Lex, Alexandra ^{[1
]}

Proschek, Veronika ^{[2
]}

Etschmaier, Harald ^{[2
]}

Tchernychova, Elena

Sezen, Meltem

Scherf, Ullrich

Grogger, Werner

Trimmel, Gregor ^{[1
]}

Slugovc, Christian ^{[1
]}

Zojer, Egbert ^{[2
]}

机构：

[1] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria

[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 16期

关键词：

D O I：

10.1002/adma.200800058

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An organic field-effect transistor can be switched chemically from depiction (normally on) to enhancement (normally off) mode by inserting a reactive thin layer comprising sulfonyl chloride and sulfonic acid functionalities. Upon exposure of the devices to alkaline gases, such as ammonia, a shift of the threshold voltage of up to 60V is achieved.

引用

页码：3143 / 3148

页数：6

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